Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2005-04-26
2005-04-26
McKane, Elizabeth (Department: 1744)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S692000, C134S002000
Reexamination Certificate
active
06884721
ABSTRACT:
Storage water used for storage of a silicon wafer in water is disclosed. The storage water contains Cu at a concentration of 0.01 ppb or less. A method of storing a silicon wafer in water is also disclosed. In the method, water containing Cu at a concentration of 0.01 ppb or less is used. In another method, a wafer is stored in water or a chemical solution, to which a chelating agent is added. The storage water and the storage methods can prevent degradation of oxide dielectric breakdown voltage which would otherwise occur due to Cu contamination from the storage water.
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Hogan & Hartson LLP
McKane Elizabeth
Shin-Etsu Handotai & Co., Ltd.
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