Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching
Reexamination Certificate
2007-10-31
2010-12-14
Culbert, Roberts (Department: 1716)
Semiconductor device manufacturing: process
Chemical etching
Liquid phase etching
C134S001300, C216S083000
Reexamination Certificate
active
07851374
ABSTRACT:
By exposing a process control wafer having a porous low-k-dielectric layer thereon in an HF-based low-k dielectric etching solvent comprising a dilating additive and a passivating additive, the pores in the low-k dielectric layer are dilated some of which connect with one another to form one or more continuous channels extending through the thickness of the dielectric layer and allowing the HF-based solvent to reach down to the substrate. Then the passivating additive component of the HF-based etching solvent forms a passivation layer at the dielectric layer and the substrate interface that protects substrate from the HF-based etchant.
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Hsu Li-Te
Liang Jin-Lin
Su Pin-Chia
Su Yu-Sheng
Yu Tai-Yung
Culbert Roberts
Duane Morris LLP
Taiwan Semiconductor Manufacturing Co. Ltd.
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