Silicon wafer, method for producing silicon wafer and method...

Details Silicon wafer, method for producing silicon wafer and method... Silicon wafer, method for producing silicon wafer and method...

2006-05-22

2009-12-29

Griffin, Steven P (Department: 1791)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

C117S002000, C117S013000, C117S019000, C257S610000, C423S324000, C423S325000, C438S460000, C438S509000

Reexamination Certificate

active

07637997

ABSTRACT:
A silicon single crystal is grown by the CZ method. A silicon melt from which the crystal is grown is added with dopant such that the crystal has a resistivity of 0.025 to 0.08 Ωcm. As well as the dopant, carbon is added to the silicon melt. The crystal is pulled in a hydrogen-bearing inert atmosphere.

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