Silicon wafer for hydrogen heat treatment and method for manufac

Details Silicon wafer for hydrogen heat treatment and method for manufac Silicon wafer for hydrogen heat treatment and method for manufac

1998-01-27

2000-05-02

Hiteshew, Felisa

Chemistry of inorganic compounds

Silicon or compound thereof

Oxygen containing

117 13, C01B 3326

Patent

active

06056931&

ABSTRACT:
In growing silicon single crystals by the CZ method, the cooling rate in the 1150-1080.degree. C. temperature zone (defect-forming temperature range) where the grown-in defects are formed is set at more than 2.0.degree. C./min to manufacture single crystals having an as-grown LSTD density of larger than 3.0.times.10.sup.6 /cm.sup.3 or a FPD density of larger than 6.0.times.10.sup.5 /cm.sup.3. As this single crystal has a small defect size, thus the dissolution rate of the defects increases by the heat treatment in a non-oxidizing atmosphere containing a hydrogen gas, so the effect of the hydrogen heat treatment can extend to the depth more than 3 .mu.m from the wafer surface.

REFERENCES:
patent: 5169791 (1992-12-01), Muenzer
patent: 5470799 (1995-11-01), Itoh et al.

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