Silicon wafer for epitaxial growth, an epitaxial wafer, and...

Details Silicon wafer for epitaxial growth, an epitaxial wafer, and... Silicon wafer for epitaxial growth, an epitaxial wafer, and...

2007-04-17

2007-04-17

Hiteshew, Felisa (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

C117S013000, C117S020000, C117S932000

Reexamination Certificate

active

10520099

ABSTRACT:
There are disclosed a silicon wafer for epitaxial growth wherein the wafer is produced by slicing a silicon single crystal grown with doping nitrogen according to the Czochralski method (CZ method) in the region where at least the center of the wafer becomes V region in which the void type defects are generated, and wherein the number of defects having an opening size of 20 nm or less among the void type defects appearing on the surface of the wafer is 0.02/cm2or less, and an epitalial wafer wherein an epitaxial layer is formed on the silicon wafer for epitaxial growth. Thereby, there can be produced an epitaxial wafer having a high gettering capability wherein very few SF exist in the epitaxial layer easily at high productivity and at low cost.

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Talid Sinno et al.; “Modeling Microdefect Formation in Czochralski Silicon”;Journal of the Electrochemical Society; 146 (6); 1999; pp. 2300-2312.

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