Silicon wafer excelling in gettering ability and method for prod

Details Silicon wafer excelling in gettering ability and method for prod Silicon wafer excelling in gettering ability and method for prod

1991-10-31

1993-02-23

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

437 12, 257635, 257913, H01L 2336, H01L 2904, H01L 21306

Patent

active

051895080

ABSTRACT:
A silicon wafer comprising a substrate of single crystal silicon, a silicon oxide film 1 to 8 .ANG. in thickness formed on one surface of said substrate, and a polysilicon layer formed on said silicon oxide film and possessing an excellent gettering ability, is prepared by oxidizing single crystal silicon, thereby forming a silicon oxide film 1 to 8 .ANG. in thickness on said surface, and exposing said silicon oxide film to a gaseous silane at an elevated temperature, thereby forming a polysilicon layer on said silicon oxide film.

REFERENCES:
patent: 4053335 (1977-10-01), Hu
patent: 4187514 (1980-02-01), Tomisawa et al.
patent: 4279671 (1981-07-01), Komatsu
patent: 4375125 (1983-03-01), Byatt
patent: 4608096 (1986-08-01), Hill
patent: 4631804 (1986-12-01), Roy
patent: 4675715 (1987-06-01), Lepselter
patent: 4828629 (1989-05-01), Ikeda et al.

Affiliated with

Also associated with

Rating

Silicon wafer excelling in gettering ability and method for prod does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Silicon wafer excelling in gettering ability and method for prod, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Silicon wafer excelling in gettering ability and method for prod will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2209607