Silicon wafer etching method and silicon wafer etchant

Details Silicon wafer etching method and silicon wafer etchant Silicon wafer etching method and silicon wafer etchant

1998-12-08

2000-08-08

Powell, William

Etching a substrate: processes

Nongaseous phase etching of substrate

Etching inorganic substrate

134 13, 252 791, 252 795, B44C 122, C09K 1300, C09K 1306

Patent

active

060997486

ABSTRACT:
There is disclosed a silicon wafer etching method in which etching is performed through use of an etchant. The etchant is an alkali aqueous solution which contains an alkali component in a concentration ranging from 50.6% to 55.0% by weight. The alkali component is preferably sodium hydroxide. The silicon wafer etching method can reduce not only surface roughness but also dispersion thereof.

REFERENCES:
patent: 5411919 (1995-05-01), Inada
patent: 5494862 (1996-02-01), Kato et al.
patent: 5679212 (1997-10-01), Kato et al.
patent: 5810994 (1998-09-01), Lee et al.
"Alkali Etching Solutions for Silicon Wafers", Jaskolska et, al.; PL-151,636; Sep. 28, 1990; Abstract.

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