Silicon wafer cleaning method

Details Silicon wafer cleaning method Silicon wafer cleaning method

2006-08-04

2009-12-15

Deo, Duy-Vu N (Department: 1792)

Cleaning and liquid contact with solids

Processes

Including application of electrical radiant or wave energy...

C134S001300

Reexamination Certificate

active

07632357

ABSTRACT:
A silicon wafer cleaning method, comprising a first cleaning process, in which, after completion of mirror polishing of the surface, the silicon wafer is immersed in a non-ionic surfactant aqueous solution; a second cleaning process, in which the wafer, after completion of the first cleaning process, is immersed in a dissolved-ozone aqueous solution; and, a third cleaning process, in which the wafer, after completion of the second cleaning process, is immersed in an aqueous solution containing ammonia and hydrogen peroxide; and in which the processes are performed in succession.

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Chinese Office Action issued Aug. 17, 2007 in connection with counterpart Chinese Patent Application No. 200610159241.6.

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