Silicon wafer cleaning fluid with HN0.sub.3, HF, HCl, surfactant

Details Silicon wafer cleaning fluid with HN0.sub.3, HF, HCl, surfactant Silicon wafer cleaning fluid with HN0.sub.3, HF, HCl, surfactant

1995-07-19

1997-06-03

McGinty, Douglas J.

Cleaning compositions for solid surfaces, auxiliary compositions

Cleaning compositions or processes of preparing

For cleaning a specific substrate or removing a specific...

510426, 510405, 252 793, 252 794, C11D 304, C11D 175, C11D 324

Patent

active

056354630

ABSTRACT:
The present invention provides a silicon wafer cleaning fluid, comprising 35 to 65% by weight of HNO.sub.3, 0.05 to 0.5% by weight of HF, 0.05 to 0.5% by weight of HCl, 0.002 to 0.1% by weight of a surface-active agent, and water and a silicon wafer cleaning method, comprising treating the surface of a silicon wafer with said cleaning fluid. According to the present invention, etching of the silicon wafer surface can be carried out simply with the amount of the etching being controlled to several tens A, and particularly about 20 to 30 .ANG., and the smoothness of the surface is not damaged. In addition, contamination with gold and other heavy metals of the order of 10.sup.12 atoms/cm.sup.2 can be decreased to not more than 1/100.

REFERENCES:
patent: 4795582 (1989-01-01), Ohmi et al.
patent: 5001084 (1991-03-01), Kawai et al.
patent: 5470393 (1995-11-01), Fukazawa

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