Silicon wafer and method for producing silicon single crystal

Details Silicon wafer and method for producing silicon single crystal Silicon wafer and method for producing silicon single crystal

2005-07-07

2008-05-27

Hiteshew, Felisa C (Department: 1792)

Chemistry of inorganic compounds

Silicon or compound thereof

Oxygen containing

C117S013000, C117S019000, C117S020000

Reexamination Certificate

active

07378071

ABSTRACT:
A method for growing a silicon single crystal ingot by a Czochralski method, which is capable of providing silicon wafers having very uniform in-plane quality and which results in improvement of semiconductor device yield. A method is provided for producing a silicon single crystal ingot by a Czochralski method, wherein when convection of a silicon melt is divided into a core cell and an outer cell, the silicon single crystal ingot is grown under the condition that the maximal horizontal direction width of the core cell is 30 to 60% of a surface radius of the silicon melt. In one embodiment the silicon single crystal ingot is grown under the condition that the maximal vertical direction depth of the core cell is equal to or more than 50% of the maximal depth of the silicon melt.

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