Silicon wafer and method for producing same

Details Silicon wafer and method for producing same Silicon wafer and method for producing same

2008-08-29

2009-11-24

Speer, Timothy M (Department: 1794)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

C117S932000, C257SE21318, C257SE21321

Reexamination Certificate

active

07621996

ABSTRACT:
A method for producing a silicon wafer that has a carbon concentration of 5×1015to 5×1017atoms/cm3, interstitial oxygen concentration of 6.5×1017to 13.5×1017atoms/cm3, and a resistivity of 100 Ωcm or more.

REFERENCES:
patent: 6544656 (2003-04-01), Abe et al.
patent: 7316745 (2008-01-01), Sadamitsu et al.
patent: 7397110 (2008-07-01), Takase et al.
patent: 2005/0250349 (2005-11-01), Sadamitsu et al.
patent: 2005/0253221 (2005-11-01), Takase et al.
patent: 2007/0175385 (2007-08-01), Kurita
patent: 1326269 (2003-07-01), None
patent: 1326270 (2003-07-01), None
patent: 2002-100631 (2002-04-01), None
patent: 2002-100632 (2002-04-01), None
patent: 2002-46983 (2002-06-01), None
patent: 2005-35862 (2005-04-01), None
patent: WO00/55397 (2000-09-01), None
Korean Office Action from corresponding Korean Patent No. 10-2007-0007283, mailed on Mar. 28, 2008 and its English translation.
Sueoka et al., “Effect of Oxide Precipitate Sizes on the Mechanical Strength of Czochralski Silicon Wafers,” Jpn. J. Appl. Phys., vol. 36: pp. 7095-7099 (1997).
Akatsuka et al., “Pinning Effect on Punched-Out Dislocations in Silicon Wafers Investigated Using Indention Method,” Jpn. J. Appl. Phys., vol. 36; pp. L1422-L1425 (1997).
A.R. Bean, et al., “The Effect of Carbon on Thermal Donor Formation in Heat Treated Pulled Silicon Crystals,” The Journal of Physics and Chemistry of Solids, vol. 33, No. 2, pp. 255-268 (Apr. 1972).

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