Semiconductor device manufacturing: process – Gettering of substrate – By vapor phase surface reaction
Reexamination Certificate
2011-07-12
2011-07-12
Garber, Charles D (Department: 2812)
Semiconductor device manufacturing: process
Gettering of substrate
By vapor phase surface reaction
C438S479000, C438S509000, C438S689000, C438S795000, C438S799000, C257SE21321, C257SE21324
Reexamination Certificate
active
07977216
ABSTRACT:
Provided is a silicon wafer including: a first denuded zone formed with a predetermined depth from a top surface of the silicon wafer; and a bulk area formed between the first denuded zone and a backside of the silicon wafer, wherein the first denuded zone is formed with a depth ranging from approximately 20 um to approximately 80 um from the top surface, and wherein a concentration of oxygen in the bulk area is uniformly distributed within a variation of 10% over the bulk area.
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Ahmadi Mohsen
Garber Charles D
Magna-Chip Semiconductor, Ltd.
NSIP Law
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