Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Patent
1992-05-26
1993-12-21
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
257190, 257191, 257192, 257195, 257289, 257327, H01L 29161, H01L 29205, H01L 29225, H01L 2714
Patent
active
052723658
ABSTRACT:
A metal oxide semiconductor field effect transistor with heterostructure has a silicon substrate. Heavily-doped source and drain layers which are different in conductivity type from the substrate are spaced apart from each other in the surface portion of the substrate. A gate electrode of polycrystalline silicon is disposed above the substrate, and is electrically insulated from the substrate by a gate insulation layer made of thermal silicon oxide thin film. A silicon germanium layer is laterally provided in a preselected substrate surface section positioned between the source and drain layers. This layer partially overlaps the source and drain layers at both of its end portions, and is thus electrically in contact with these layers. The silicon germanium layer acts as a channel of the transistor.
REFERENCES:
patent: 4994866 (1991-02-01), Awano
patent: 5012304 (1991-04-01), Kash et al.
patent: 5019882 (1991-05-01), Solomon et al.
Mochigetsu "Satellite Broadcasting Reception HEMTs having Noise Characteristics of Less Than 1dB" Nikkei Microdevices Apr. 1989 pp. 91-95.
Mishima et al "Effect of Interface Quality on the Electrical Properties of p-Si/SiGe 2-D Hole Gas System" Appl Phys Lett vol. 57 No. 24 Dec. 10, 1990 pp. 2567-2569.
IEEE Electron Device Letters, vol. 11, No. 1, Jan. 1990; "Suppression of Hot-Carrier Degradation in Si MOSFET's by Germanium Doping"; pp. 45-47; Chien-Shing Pai, William M. Mansfield, and Glenn A. Clarke.
IEEE Electron Device Letters, vol. EDL-7, No. 5, May 1986; "Enhancement- and Depletion-Mode p-Channel Ge.sub.x Si.sub.1-x Modulation-Doped FET's"; pp. 308-310; T. P. Pearsall and John C. Bean.
"Silicon Germanium-Base Heterojunction Bipolar Transistors by Molecular Beam Epitaxy", G. L. Patton et al; IEEE Electron Device Letters, vol. 9, No. 4, Apr. 1988.
Jackson Jerome
Kabushiki Kaisha Toshiba
Martin Valencia M.
LandOfFree
Silicon transistor device with silicon-germanium electron gas he does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Silicon transistor device with silicon-germanium electron gas he, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Silicon transistor device with silicon-germanium electron gas he will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-310873