Silicon to sapphire bond

Adhesive bonding and miscellaneous chemical manufacture – Methods – Surface bonding and/or assembly therefor

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156281, 437974, 437921, 437225, 437 21, 148DIG12, 148DIG135, 148DIG150, H01L 21304

Patent

active

054415918

ABSTRACT:
A method of bonding silicon to sapphire may be performed at room temperature and with no greater pressure than that due to one wafer resting on another. The method comprises the steps of polishing one side of a flat sapphire wafer to a mirror-like surface; polishing one side of a flat silicon wafer to a mirror-like surface; cleaning the wafers and then stacking the wafers so that their corresponding mirror-like surfaces contact. The room temperature bonding that occurs is relatively strong, and the bonded wafers can be handled without danger of their becoming unbonded. If desired, the bonded wafers may be subjected to further processing to further strengthen their bond.

REFERENCES:
patent: 2977417 (1961-03-01), Doelz et al.
patent: 3123953 (1964-03-01), Merkl
patent: 4671846 (1987-06-01), Shimbo et al.
patent: 4883215 (1989-11-01), Goesele et al.
patent: 4897362 (1990-01-01), Delgado et al.
patent: 4939101 (1990-07-01), Black et al.
patent: 4962879 (1990-10-01), Goesele et al.
patent: 5013380 (1991-05-01), Aoshima
patent: 5054683 (1991-10-01), Haisma et al.
patent: 5086011 (1992-02-01), Shiota
patent: 5152857 (1992-10-01), Ito et al.
patent: 5160560 (1992-11-01), Welkowsky et al.
patent: 5162251 (1992-11-01), Poole et al.
patent: 5169472 (1992-12-01), Goebel
patent: 5330918 (1994-07-01), Dubbelday et al.
Haisma, J. et al, "Silicon-on-Insulator Wafer Bonding-Wafer Thinning Techogical Evaluations," Japanese Journal of Applied Physics, vol. 28, No. 8, Aug. 1989, pp. 1426-1443.
G. P. Imthurn, G. A. Garcia, H. W. Walker, and L. Forbes, "Bonded Silicon-On-Sapphire Wafers and Devices", J. Appl. Phys., 72(6), 15 Sep. 1992, pp. 2526-2527.
W. P. Maszara, G. Goetz, A. Caviglia, and J. B. McKitterick, "Bonding of Silicon Wafers for Silicon-On-Insulator", J. Appl. Phys., 64(10), 15 Nov. 1988, pp. 4943-4950.

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