Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2009-01-26
2011-10-18
Richards, N Drew (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C438S149000, C438S151000, C438S164000, C257SE21704
Reexamination Certificate
active
08039838
ABSTRACT:
Systems and methods of fabricating silicon-based thin film transistors (TFTs) on flexible substrates. The systems and methods incorporate and combine deposition processes such as chemical vapor deposition and plasma-enhance vapor deposition, printing, coating, and other deposition processes, with laser annealing, etching techniques, and laser doping, all performed at low temperatures such that the precision, resolution, and registration is achieved to produce a high performing transistor. Such TFTs can be used in applications such as displays, packaging, labeling, and the like.
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Application and File History of U.S. Appl. No. 12/359,929, Inventors Schaecher et al., filed Jan. 26, 2009.
Heitzinger John M.
Snyder John
Patterson Thuente Christensen Pedersen , P.A.
Richards N Drew
Singal Ankush
Soligie, Inc.
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