Silicon thin film and method of producing the same

Details Silicon thin film and method of producing the same Silicon thin film and method of producing the same

1989-07-11

1991-05-21

Weisstuch, Aaron

Compositions

Electrically conductive or emissive compositions

Light sensitive

136258, 252 623R, 252 623E, 148 332, 427 39, 4272552, 437 4, 437101, 437113, 357 59, 428620, H01C 1300, H01C 310392

Patent

active

050173081

ABSTRACT:
A silicon thin film is composed of primarily silicon atoms, 0 to 8 atm % hydrogen, at least one element selected from the group including fluorine, chlorine, bromine and iodine, and an impurity element, wherein about 80 to 100% of microcrystalline grains are interspersed in an amorphous phase. The thin film is produced by deposition on a substrate in a plasma atmosphere using as a raw material gas silane (SiH.sub.4) or halogenated silane (SiH.sub.o--3 X.sub.4--1) wherein X represents a halogen or a combination of two or more halogens, and a dopant gas mixed with the raw material gas. The method comprises the steps of: (1) diluting the mixed gas with hydrogen in a ratio of the diluting gas to the raw material gas of from 50:1 to 100:1, to control the film deposition rate to produce a layer including mixed crystalline and amorphous substances; and (2) applying an electric power to provide a plasma discharge power density of from 0.1 to about 0.5 W/cm.sup.2, at a reaction pressure of 5 to 10 torr.

REFERENCES:
patent: 4409134 (1983-10-01), Yamazaki
patent: 4433202 (1984-02-01), Maruyama et al.
A. Matsuda et al, Jap. J. Appl. Phys., vol. 19, Jun. 1980, pp. L305-L308.

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