Silicon tetrachloride epitaxial process for producing very sharp

Details Silicon tetrachloride epitaxial process for producing very sharp Silicon tetrachloride epitaxial process for producing very sharp

1978-06-05

1979-05-08

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148 15, 148189, 148191, 156612, 156613, H01L 21205, H01L 21302

Patent

active

041534867

ABSTRACT:
A method is described for depositing silicon epitaxy with very low defect levels and sharp dopant profiles which are suitable for fabricating high performance, shallow device structures. The epitaxial layer envisioned is less than about 2 microns in thickness. The layer is deposited upon a silicon substrate that has subcollector buried layers therein of above about 1.times.10.sup.20 N type impurity. The substrate is baked at between about 1120.degree. to 1180.degree. C. in hydrogen and then the epitaxial layer is formed using silicon tetrachloride and a temperature of between about 1000.degree. to 1100.degree. C. thereon.

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Gupta et al., "Silicon Epitaxial Layers . . . Impurity Profiles" J. Electrochem Soc., vol. 116, No. 11, Nov. 1969, pp. 1561-1565.
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Bratter et al., "Minimizing Autodoping . . . Silicon Epitaxial Layer" I.B.M. Tech. Discl. Bull., vol. 15, No. 11, Apr. 1973, p. 3385.
Maeda et al., "Effect of Vapor Etching . . . Epitaxial Layer" Japan J. Appl. Phys., vol. 13, No. 11, 1974, pp. 1903-1904.

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