Silicon-system thin film, photovoltaic device, method for formin

Details Silicon-system thin film, photovoltaic device, method for formin Silicon-system thin film, photovoltaic device, method for formin

1999-01-19

2000-08-15

Koslow, C. Melissa

Compositions

Barrier layer device compositions

Group iii element containing binary compound; e.g., ga, as

252 623R, 438488, 438 28, 136249, 257 65, H02N 600, H01L 27142

Patent

active

061031380

ABSTRACT:
This invention provides a silicon-system thin film, characterized by containing at least 1 ppm of phosphorus atoms and diffraction intensity at the (220) plane with X ray or electron beams of at least 30% of total diffraction intensity, photovoltaic device that contains the silicon-system thin film, and methods for forming the silicon-system thin film and photovoltaic device. These methods give the silicon-system thin film and photovoltaic device of high photoelectric conversion efficiency at a high film-making rate.

REFERENCES:
patent: 4625224 (1986-11-01), Nakagawa et al.
patent: 4719501 (1988-01-01), Nakagawa et al.
patent: 4766477 (1988-08-01), Nakagawa et al.
patent: 4905072 (1990-02-01), Komatsu et al.
patent: 4982251 (1991-01-01), Nakagawa et al.
patent: 5804466 (1998-09-01), Arao et al.

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