Silicon substrate having porous oxidized silicon layers and its

Details Silicon substrate having porous oxidized silicon layers and its Silicon substrate having porous oxidized silicon layers and its

1990-12-18

1992-02-25

Tufariello, T. M.

Electrolysis: processes, compositions used therein, and methods

Electrolytic coating

Coating selected area

C25D 1132

Patent

active

050910612

ABSTRACT:
In the silicon substrate having porous oxidized silicon layers of this invention, which consists of a silicon substrate the one surface of which is dotted with porous oxidized silicon layers, the residual internal stress (compression stress) is dispersedly distributed in the porous oxidized silicon layers. Therefore, the entire silicon substrate having porous oxidized silicon layers of this invention is only minimally warped.
Adopting a method for producing the silicon substrate of this invention which consists of covering with a mask the surface of a silicon substrate except its dotting areas to be treated, subjecting the silicon substrate to anodic formation in an aqueous hydrofluoric acid solution to form porous silicon layers in the areas to be treated and not covered with the mask and then oxidizing the formed porous silicon layers enables secured production of a silicon substrate dotted with porous oxidized silicon layers.

REFERENCES:
patent: 4028149 (1977-06-01), Dienes
patent: 4104090 (1978-08-01), Pogge

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