Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated...
Reexamination Certificate
2007-06-12
2007-06-12
Whitehead, Jr., Carl (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Reexamination Certificate
active
10498206
ABSTRACT:
A silicon substrate includes plural partial areas defined on the silicon substrate such that adjacent partial areas are orientated in different directions. The plural partial areas define an insulating layer that extends from a surface of the silicon subtrate into the silicon substrate. Each of the plural partial areas includes first regions that contain silicon dioxide formed by oxidation of silicon in the silicon substrate, and second regions that contain silicon dioxide deposited onto the silicon substrate. The first regions and the second regions are oriented in a substantially same direction and are arranged side-by-side and alternately such that two first regions do not border and two second regions do not border.
REFERENCES:
patent: 3935634 (1976-02-01), Kurtz et al.
patent: 6093599 (2000-07-01), Lee et al.
patent: 6255190 (2001-07-01), Kroner
patent: 6274920 (2001-08-01), Park et al.
patent: 6515319 (2003-02-01), Widmann et al.
patent: 6680214 (2004-01-01), Tavkhelidze et al.
patent: 002 173 (1997-06-01), None
patent: 60080244 (1985-05-01), None
patent: 03062946 (1991-03-01), None
patent: 05063069 (1993-03-01), None
patent: 2000077610 (2000-03-01), None
patent: WO97/45873 (1997-12-01), None
International Preliminary Examination Report from PCT/EP02/013398, dated Nov. 27, 2002.
H.B. Erzgraber “A Novel Buried Oxide Isolation for Monolithic RF Inductors on Silicon” XP-000859430; 1998 IEEE; pp. 535-539.
Koppitsch Günther
Stückler Ewald
Austriamicrosystems AG
Fish & Richardson P.C.
Harrison Monica D.
LandOfFree
Silicon substrate having an insulating layer does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Silicon substrate having an insulating layer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Silicon substrate having an insulating layer will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3857764