Silicon substrate having an epitaxial superconducting layer ther

Details Silicon substrate having an epitaxial superconducting layer ther Silicon substrate having an epitaxial superconducting layer ther

1991-03-11

1992-12-22

Kunemund, Robert

Superconductor technology: apparatus, material, process

High temperature , per se

Having tc greater than or equal to 150 k

505701, 505729, 505730, 505731, 505732, 505734, 156610, 156612, C30B 2518

Patent

active

051734745

ABSTRACT:
An HTSC material epitaxially deposited on a YSZ buffer layer on a surface of a monocrystalline silicon substrate has a zero resistance transition temperature of at least 85.degree. K., a transition width (10-90%) of no more than 1.0.degree. K., a resistivity at 300.degree. K. of no more than 300 micro-ohms-centimeter and a resistivity ratio (at 300.degree. K./100.degree. K.) of 3.0.+-.0.2. The surface of the silicon substrate is cleaned using a spin-etch process to produce an atomically clean surface terminated with an atomic layer of an element such as hydrogen with does not react with silicon. The substrate can be moved to a deposition chamber without contamination. The hydrogen is evaporated in the chamber, and then YSZ is epitaxially deposited preferably by laser ablation. Thereafter, the HTSC material, such as YBCO, is epitaxially deposited preferably by laser ablation. The structure is then cooled in an atmosphere of oxygen.

REFERENCES:
patent: 4837609 (1989-06-01), Gurvitch
patent: 4939308 (1990-07-01), Maxfield et al.
patent: 4940693 (1990-07-01), Shappirio et al.
patent: 4980339 (1990-12-01), Setsune et al.
AIDA et al "Preparation of YBa.sub.2 Cu.sub.3 O.sub.7-x Superconducting Thin Films by RF-Magnetron Sputtering" Jap. J. Appl. Phys. vol. 26(9) pp. L1489-91 (Sep. 1987).
Face et al "Preparation of Superconducting Thin Films of BiSrCaCuOs by Reactive Sputtering" Appl. Phys. Lett vol 53(3) pp. 246-248 (Jul. 18, 1988).
"In-situ growth of superconducting YBa.sub.2 Cu.sub.3 Oy films by pulsed laser deposition", J. B. Boyce, G. A. N. Connell et al., Reprinted from "Processing of Films for High T.sub.c Superconducting Electronics", SPIE--The International Society for Optical Engineering, vol. 1187 Oct. 10-12 1989, Santa Clara, Calif.
"Heteroepitaxial Growth of Yttria-Stabilized Zirconia (YSZ) on Silicon", Hirofumi Fukumoto, Takeshi Imura and Ykio Osaka, Japanese Journal of Applied Physics, vol. 27, No. 8, Aug. 1988, pp. L1404-L1405.
"Superconducting Y.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x films on Si", T. Venkatesan et al., App. Phy. Lett 53(3), Jul. 18, 1988.
"Silicon surface passivation by hydrogen termination: A comparative study of preparation methods", D. B. Fenner et al., J. Appl. Phys. 66(1), Jul. 1, 1989.
"Highly oriented as-deposited superconducting laser ablated thin films of Y.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-.delta. on SrTiO.sub.3, zirconia, and Si substrates", G. Koren et al., Appl. Phys. Lett. 53(23), Dec. 5, 1988.
"Deposition and Characterization of Y-Ba-Cu O Thin Films on Silicon Substrates: Interface Analysis", D. B. Fenner et al., Internat'l Conf. Materials and Mechanisms of Superconductivity High-Temperature Superconductors, Stanford University Jul. 23-28, 1989.
"XPS Analysis of Y-Ba-Cu-O and Zr-O Thin Films and Interfaces With Silicon Substrates", D. B. Fenner et al., Reactions at YBCO/Si MRS Meeting, Nov. 1989.
"Silicon Surface Passivation For Heteroepitaxy By Hydrogen Termination", D. b. Fenner et al., Mat. Res. Soc. Symp. Proc. vol. 148, 1989.
Witanachchi et al, "As-Deposited Y-Ba-Cu-O Superconducting Films on Silicon At 400.degree. C.", Applied Physics Letters vol. 54(6) Feb. 6, 1989 pp. 578-580.
Richards et al, "Feasibility of the High Tc Superconducting Bulometer", Applied Physics Letters vol. 54(3) Jan. 16, 1989, pp. 283-285.

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