Silicon substrate having a recess for receiving an element

Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – Groove

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257618, 257522, 257 98, 257 99, H01L 2906, H01L 2900, H01L 3300

Patent

active

061005762

ABSTRACT:
In silicon substrate having a recess for receiving an element, at least one holding element, integral with the substrate, extends, at least partly, over the recess to hold an element received in the recess in place.

REFERENCES:
patent: 3880684 (1975-04-01), Abe
patent: 4210923 (1980-07-01), North et al.
patent: 4270134 (1981-05-01), Takeda et al.
patent: 4945400 (1990-07-01), Blonder et al.
patent: 5328559 (1994-07-01), Jerman
patent: 5412748 (1995-05-01), Furuyama et al.
Japanese Abstract No. 59-7913, Jan. 17, 1984.

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