Silicon substrate apparatus and method of manufacturing the...

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation

Reexamination Certificate

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C257SE39005, C257SE27007

Reexamination Certificate

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07081370

ABSTRACT:
A first rectangular groove having a rectangular cross section and a second rectangular groove substantially orthogonal to the first rectangular groove and having a rectangular cross section are formed in a first silicon substrate. A third rectangular groove located at a position facing the first rectangular groove and having a rectangular cross section is formed on a second silicon substrate. A device substrate including a frequency conversion device is provided in the second rectangular groove, so that the frequency conversion device is located where the first and second rectangular grooves are orthogonal to each other. Further, the first silicon substrate on which the device substrate is located is bonded to the second silicon substrate, so that the first rectangular groove opposes the third rectangular groove, forming a rectangular waveguide which includes the first rectangular groove and the third rectangular groove, and in which a received high frequency signal propagates and is incident on the frequency conversion device.

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