Silicon structures having an absorption layer

Details Silicon structures having an absorption layer Silicon structures having an absorption layer

1998-04-28

2000-10-31

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Field effect device in non-single crystal, or...

257 57, 257 59, 257 60, 257 72, 438158, 438149, 438151, 438157, 438166, H01L 2976, H01L 2904

Patent

active

061406686

ABSTRACT:
Amorphous and polycrystalline silicon (hybrid) devices are formed close to one another employing laser crystallization and back side lithography processes. A mask (e.g., TiW) is used to protect the amorphous silicon device during laser crystallization. A patterned nitride layer is used to protect the amorphous silicon device during rehydrogenation of the polycrystalline silicon. An absorption film (e.g., amorphous silicon) is used to compensate for the different transparencies of amorphous and polycrystalline silicon during the back side lithography. Device spacing of between 2 and 50 micrometers may be obtained, while using materials and process steps otherwise compatible with existing hybrid device formation processes.

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