Silicon strain engineering accomplished via use of specific...

Details Silicon strain engineering accomplished via use of specific... Silicon strain engineering accomplished via use of specific...

2006-07-25

2006-07-25

Dang, Trung (Department: 2823)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S435000, C438S437000

Reexamination Certificate

active

07081395

ABSTRACT:
A method of forming a strained silicon layer created via a material mis-match with adjacent trench isolation (TI), regions filled with a dielectric layer comprised with either a higher, or lower thermal expansion coefficient than that of silicon, has been developed. Filling of trenches with a dielectric layer comprised with a higher thermal expansion coefficient than that of silicon results in a tensile strain in planar direction and compressive strain in vertical direction, in an adjacent silicon region. Enhanced electron mobility in channel regions of an N channel MOSFET device, and enhanced hole mobility and transit time in an N type base region of a vertical PNP bipolar device, is realized when these elements are formed in the silicon layer under tensile strain. Filling of trenches with a dielectric layer comprised with a lower thermal expansion coefficient than the thermal expansion coefficient of silicon results in a compressive strain in planar directions and tensile strain in vertical directions, in an adjacent silicon region. Enhanced hole mobility in channel regions of an P channel MOSFET device, and enhanced electron mobility and transit time in a P type base region of a vertical NPN bipolar device, is realized when these elements are formed in the silicon layer under compressive strain.

REFERENCES:
patent: 5739575 (1998-04-01), Numano et al.
patent: 5946562 (1999-08-01), Kuo
patent: 6037237 (2000-03-01), Park et al.
patent: 6297128 (2001-10-01), Kim et al.
patent: 6310367 (2001-10-01), Yagishita et al.
patent: 6482715 (2002-11-01), Park et al.
patent: 6642125 (2003-11-01), Oh et al.
patent: 6653200 (2003-11-01), Olsen
patent: 6657276 (2003-12-01), Karlsson et al.
patent: 6680240 (2004-01-01), Maszara
patent: 6717216 (2004-04-01), Doris et al.
patent: 2004/0063300 (2004-04-01), Chi
patent: 2004/0212035 (2004-10-01), Yeo et al.

Affiliated with

Also associated with

Rating

Silicon strain engineering accomplished via use of specific... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Silicon strain engineering accomplished via use of specific..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Silicon strain engineering accomplished via use of specific... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3567543