Silicon stencil mask manufacturing method

Details Silicon stencil mask manufacturing method Silicon stencil mask manufacturing method

1998-03-18

1999-10-26

Utech, Benjamin

Semiconductor device manufacturing: process

Chemical etching

Having liquid and vapor etching steps

438705, 438710, 438734, 430 5, 216 2, 216 12, H01L 21027

Patent

active

059727942

ABSTRACT:
Methods are disclosed for manufacturing silicon stencil masks for use in charged-particle-beam microlithography. According to the method, a boron-doped layer is formed on a silicon substrate, a mask pattern is formed on the boron doped layer, and the boron-doped layer is etched according to the mask pattern to form voids in the boron-doped layer. The voids do not extend completely through the thickness of the boron-doped layer. In subsequent steps, a silicon nitride layer is applied and etched to form openings in which the silicon substrate is etched away to form struts. Because the boron-doped layer is not completely etched through in the earlier etching step, the mask is much more resistant to fracture in a subsequent cleaning step. In a final step after cleaning, the boron-doped layer is etched to extend the voids completely through the thickness of the boron-doped layer.

REFERENCES:
patent: 5756237 (1998-05-01), Amemiya

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