Silicon source component for use in molecular beam epitaxial gro

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118726, 156610, 156DIG103, 148DIG169, B32B 310, C30B 2304

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045500479

ABSTRACT:
A quantity of silicon serving as a source of the element silicon for use in a molecular beam epitaxial growth apparatus where the silicon is in the form of a monocrystalline wafer with a plurality of electrically parallel filaments separated by slots that pass completely through the wafer, each filament having a length dimension that is greater than the width and height dimensions, joined at a broad contact area at each filament end and where an electric current is passed through the filaments through the broad contact areas.

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