Silicon solar cells with low-cost substrates

Batteries: thermoelectric and photoelectric – Thermoelectric – Radiation pyrometer

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75134S, 148174, 148175, 148186, 156616R, 156617SP, 136 89SG, 357 7, 357 30, 357 59, 423350, H01L 3106

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active

041244109

ABSTRACT:
Epitaxial and diffusion-type planar diodes and solar cells utilize low-cost refined metallurgical silicon substrates having a substantially higher impurity content than conventional high-cost, high purity semiconductor grade silicon. The epitaxial type products have an n-on-p-on-p substrate configuration, while the diffusion-type products have pentavalent impurities diffused therein to form a p-n junction in the low cost silicon substrate. One embodiment employs a multigrained refined metallurgical silicon (RMS) prepared by precipitating essentially iron-free silicon platelets from a solution of metallurgical grade silicon in molten aluminum, melting said refined platelets, in contact with a silica slag and pulling silicon boules from a melt of said refined metallurgical silicon (RMS). By directionally solidifying the refined silicon-slag melt, a multigrained, directionally solidified refined metallurgical silicon (DS/RMS) is obtained, with boules being pulled from a melt thereof for use as said low-cost substrate. The DS/RMS may also be re-melted and directionally solidified a second time with the boules being pulled from said twice directionally-solidified material being a desirable, low-cost, single crystal material suitable for use as said substrate for planar diode and solar cell applications.

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T. L. Chu, "Reducing Grain-Boundary Effects In Polycrystalline Silicon Solar Cells", Appl. Phys. Lett., vol. 29, pp. 675-676 (1976).
T. L. Chu et al., "Silicon Solar Cells On metallurgical Silicon Substrates", Conf. Record, 12th IEEE Photovoltaic Specialists Conf., pp. 74-76, Nov. 1976.
T. L. Chu et al., "Silicon Solar Cells On Unidirectionally Recystallized Metallurgical Silicon", IEEE Trans Electron Devices, vol. Ed-24, pp. 442-446, (1977).

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