Silicon solar cells made by a self-aligned, selective-emitter, p

Batteries: thermoelectric and photoelectric – Photoelectric – Cells

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136255, 136256, H01L 3100

Patent

active

058715916

ABSTRACT:
A potentially low-cost process for forming and passivating a selective emitter. The process uses a plasma etch of the heavily doped emitter to improve its performance. The grids of the solar cell are used to mask the plasma etch so that only the emitter in the region between the grids is etched, while the region beneath the grids remains heavily doped for low contact resistance. This process is potentially low-cost because it requires no alignment. After the emitter etch, a silicon nitride layer is deposited by plasma-enhanced, chemical vapor deposition, and the solar cell is annealed in a forming gas.

REFERENCES:
patent: 4158591 (1979-06-01), Avery et al.
Z. Chen, P. Sana, J. Salami, and A. Rohatgi, "A Novel and Effective PECVD Si02/SiN Antireflection Coating for Si Solar Cells," IEEE Trans. Elect. Dev., 40, Jun. 1993, pp. 1161-1165.
N. Mardesich, "Solar Cell Efficiency Enchancement by Junction Etching and Conductive AR Coating Processes," Proc. 15th PVSC, May 1981, pp. 446-449.
S. R. Wenham, M. R. Willison, S. Narayanan, and M. A. Green, "Efficiency Improvement in Screen-Printed Polycrystalline Silicon Solar Cells by Plasma Treatments," Proc. 18th PVSC, Oct. 1985, pp. 1008-1013.
D. S. Ruby, W. L. Wilbanks, C. B. Fleddermann, and J. I. Hanoka, "The Effect of Hydrogen Plasma and PECVD-Nitride Deposition of Bulk and Surface passivation in String-Ribbon Silicon Solar Cells." Presented at the 13th European Potovoltaic Solar Energy Conference, Nice, France, Oct. 1995.
D. S. Ruby, C. B. Fleddermann, M. Roy and S. Narayannan, "Self-Aligned Selective Emitter Plasma-Etchback and Passivation Process for Screen-Printed Silicon Solar Cells", Proc. 6th PVSC, Aug. 12-14, 1996.

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