Silicon solar cell and production method thereof

Details Silicon solar cell and production method thereof Silicon solar cell and production method thereof

2004-10-08

2009-02-24

Neckel, Alexa D (Department: 1795)

Batteries: thermoelectric and photoelectric

Photoelectric

Panel or array

C136S243000, C136S261000

Reexamination Certificate

active

07495167

ABSTRACT:
It is an object of the present invention to provide a silicon solar cell with n+pp+BSF structure using solar grade silicon substrate, having a life time close to the initial level of the substrate.The solar cell of the present invention is produced by a back side boron diffusion step for diffusing boron on a back side of the substrate, a front side phosphorus diffusion step for diffusing phosphorus on a front side of the substrate, a low-temperature annealing step for annealing the substrate at 600° C. or lower for 1 hour or more, and an electrode firing step carried out at a peak temperature of 700° C. or lower for 1 minute or less, carried out in this order.

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T. Joge, et al., “Low-Temperature Boron Gettering for Improving the Carrier Lifetime in Fe-Contaminated Bifacial Silicon Solar Cells with n+pp+Back-Surface-Field Structure”,Japanese Journal of Applied Physics, vol. 42 (2003) pp. 5397-5404.
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