Industrial electric heating furnaces – Plasma furnace device – Direct furnace
Patent
1988-08-31
1990-01-30
Envall, Jr., Roy N.
Industrial electric heating furnaces
Plasma furnace device
Direct furnace
H05B 700
Patent
active
048978523
ABSTRACT:
A silicon smelting furnace and a process for utilizing this furnace for the production of silicon is described. The process involves a process in which equilmolar proportions of silicon carbide and silicon dioxide are charged to the reaction zone of a silicon furnace. Above the furnace is placed a shaft containing particulate carbon in the amount of 2 moles of carbon per mole of silicon dioxide charged to the reaction zone. As energy is applied to the reaction zone, molten silicon, gaseous silicon monoxide, and gaseous carbon monoxide are formed, the gases passing through the shaft of carbon, converting the carbon to silicon carbide. The silicon carbide, so formed, is combined with an equimolar proportion of silicon dioxide, and the cycle is repeated. Aside from an initial charge of silicon carbide, the feeds to the smelting furnace are silicon dioxide and carbon, silicon carbide being formed concurrently in a bed of carbon separated from the furnace reaction zone during the smelting cycle.
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Dosaj Vishu D.
May James B.
Oleson John D.
Bittell James E.
Dow Corning Corporation
Envall Jr. Roy N.
Yorimoto Carl A.
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