Silicon single crystal with low defect density and method of pro

Details Silicon single crystal with low defect density and method of pro Silicon single crystal with low defect density and method of pro

1996-06-03

1998-03-17

Garrett, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117 15, 117931, 117932, C30B 1520

Patent

active

057282110

ABSTRACT:
A silicon single crystal having low defects, such as flow pattern defects and laser scattering tomography defects, and high dielectric breakdown strength in oxides and a method of producing the same using the Czochralski technique comprising steps of adjusting a first passage time of a growing crystal for a first temperature range of the melting point to 1,200.degree. C. so as to be 190 min. or shorter and adjusting a second passage time thereof for a second temperature range of 1,150.degree. C. to 1,080.degree. C. so as to be 60 min. or longer during crystal growth.

REFERENCES:
patent: 5129986 (1992-07-01), Sekij et al.
patent: 5152867 (1992-10-01), Kitaura et al.
patent: 5485802 (1996-01-01), Altekruger et al.
"Submicron Device II-3 Reliability of the Gate Oxide Film" Mitsumasa Koyanagi, published by Maruzen K. K. Tokyo, p. 70.
Shinsuke Sadamitsu et al., "Dependence of the Grown-in Defect Distribution of Growth Rates in Czochralski Silicon," JPN. J. APPL. PHYS., vol. 32, Part 1, No. 9A, Sep. 1993, pp. 3675-3681.

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