Silicon single crystal wafer process apparatus, silicon...

Details Silicon single crystal wafer process apparatus, silicon... Silicon single crystal wafer process apparatus, silicon...

2007-05-08

2007-05-08

Heitbrink, Tim (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Apparatus

For crystallization from liquid or supercritical state

Reexamination Certificate

active

10489918

ABSTRACT:
A silicon single crystal wafer process apparatus (10) having: a process chamber (11); a susceptor (12) which is disposed in the process chamber (11), and on an upper surface of which the silicon single crystal wafer (19) is placed; and a lift pin (14) which is provided to be capable of a going up and down operation with respect to the susceptor (12), for attaching or detaching the silicon single crystal wafer (19) to or from the susceptor (12) with the going up and down operation, in a state to support the silicon single crystal wafer (19) from a lower surface side, wherein the lift pin (14) is subjected to polishing on a contact end surface (14d) which contacts with a rear surface of the silicon single crystal wafer (19).

REFERENCES:
patent: 5462603 (1995-10-01), Murakami
patent: 6146504 (2000-11-01), Patadia et al.
patent: 6211088 (2001-04-01), Masuda et al.
patent: A 62-204535 (1987-09-01), None
patent: A 5-47906 (1993-02-01), None
patent: U 05-031238 (1993-02-01), None
patent: U 6-2677 (1994-01-01), None
patent: A 06-224281 (1994-08-01), None
patent: A 7-22489 (1995-01-01), None
patent: A 07-153825 (1995-06-01), None
patent: A 08-288190 (1996-11-01), None
patent: H09-266175 (1997-10-01), None
patent: H09-266214 (1997-10-01), None
patent: H10-106955 (1998-04-01), None
patent: A 11-67751 (1999-03-01), None
patent: 2000-026192 (2000-01-01), None
patent: A 2000-26192 (2000-01-01), None
patent: 2000-323556 (2000-11-01), None
patent: 2001-237171 (2001-08-01), None
Colvin and Stanley, American Machinist's Handbook 1940, McGraw-Hill Book Company, 7thEdition, pp. 523-526.
European Search Report.
Japanese Office Action and partial English translation of Japanese Office Action.

Affiliated with

Also associated with

Rating

Silicon single crystal wafer process apparatus, silicon... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Silicon single crystal wafer process apparatus, silicon..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Silicon single crystal wafer process apparatus, silicon... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3751707