Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Reexamination Certificate
2005-06-07
2005-06-07
Hiteshew, Felisa (Department: 1765)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
C117S013000, C117S019000, C423S328200
Reexamination Certificate
active
06902618
ABSTRACT:
The present invention provides a silicon single crystal wafer having a diameter of 300 mm or more and having a defect-free layer containing no COP for a depth of 3 μm or more from a surface and a method for producing a silicon single crystal, wherein, when a silicon single crystal having a diameter of 300 mm or more is pulled with nitrogen doping by the CZ method, the crystal is grown with a value of V/G [mm2/K·min] of 0.17 or less, where V [mm/min] is a pulling rate, and G [K/mm] is an average of temperature gradient in the crystal along a pulling axis from the melting point of silicon to 1400° C. Thus, there are established conditions for pulling a silicon single crystal and conditions for heat treatment of wafer for obtaining a silicon single crystal wafer having a defect-free layer free from COP for a sufficient depth of the surface layer by pulling a silicon single crystal having a diameter of 300 mm or more, processing the crystal into wafers and subjecting the wafers to the heat treatment.
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Hiteshew Felisa
Hogan & Hartson LLP
Shin-Etsu Handotai & Co., Ltd.
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