Silicon single crystal wafer having few defects wherein nitrogen

Details Silicon single crystal wafer having few defects wherein nitrogen Silicon single crystal wafer having few defects wherein nitrogen

1999-05-25

2000-06-20

Garrett, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth with a subsequent step acting on the...

252 623R, 4233281, C20B 2502

Patent

active

06077343&

ABSTRACT:
There is disclosed a method for producing a silicon single crystal wafer wherein a silicon single crystal is grown in accordance with the CZ method with doping nitrogen in an N-region in a defect distribution chart which shows a defect distribution in which the horizontal axis represents a radial distance D (mm) from the center of the crystal and the vertical axis represent a value of F/G (mm.sup.2 /.degree. C..multidot.min), where F is a pulling rate (mm/min) of the single crystal, and G is an average intra-crystal temperature gradient (.degree. C./mm) along the pulling direction within a temperature range of the melting point of silicon to 1400.degree. C. There can be provided a method of producing a silicon single crystal wafer consisting of N-region where neither V-rich region nor I-rich region is present in the entire surface of the crystal by CZ method, under the condition that can be controlled easily in a wide range, in high yield, and in high productivity.

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Abe, Takao and Hiroshi Takeno, "Dynamic Behavior of Intrinsic Point Defects in FZ and CZ Silicon Crystals," Mat. Res. Soc. Symp. vol. 262, 1992 Materials Research Society, pp. 3-13.
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Sadamitsu, et al. "Dependence of the Grown-in Defect Distribution on Growth Rates in Czochralski Silicon," Jpn. J. Appl. Phys. vol. 32 (1993), pp. 3675-3681.
Ammon et al., "The dependence of bulk defects on the axial temperature gradient of silicon crystals during Czochralski growth", Journal of Crystal Growth. vol. 151, 6-1-1995, pp. 273-277.

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