Silicon single crystal wafer having few crystal defects, and met

Details Silicon single crystal wafer having few crystal defects, and met Silicon single crystal wafer having few crystal defects, and met

1998-11-09

2000-05-23

Hiteshew, Felisa

Chemistry of inorganic compounds

Silicon or compound thereof

Oxygen containing

117 13, C01B 3326

Patent

active

060663065

ABSTRACT:
In a method for producing a silicon single crystal wafer, a silicon single crystal is grown in accordance with the Czochralski method such that the F/G value becomes 0.112-0.142 mm.sup.2 /.degree.C.multidot.min at the center of the crystal, where F is a pulling rate (mm/min) of the single crystal, and G is an average intra-crystal temperature gradient (.degree.C/mm) along the pulling direction within a temperature range of the melting point of silicon to 1400.degree. C. Additionally, the single crystal is pulled such that the interstitial oxygen concentration becomes less than 24 ppma , or the time required to pass through a temperature zone of 1050-850.degree. C. within the crystal is controlled to become 140 minutes or less. The method allows production of silicon single crystal wafers in which neither FPDs nor L/D defects exist on the wafer surface, which therefore has an extremely low defect density, and whose entire surface is usable.

REFERENCES:
Yamashita, et al. "Effects of Thermal History on OSF Formation in CZ Silicon Crystals," Electrochemical Society Extended Abstracts, vol., 89-1, May 1989, pp. 346-347.
Dupret, et al. "Global Modelling of Heat Transfer in Crystal Growth Furnaces," Int. J. Heat Mass Transfer, vol. 33, No. 9, pp. 1849-1871, 1990.
Sadamitsu, et al. "Dependence of the Grown-in Defect Distribution on Growth Rates in Czochralski Silicon," Jpn. J. Appl. Phys. vol. 32 (1993) pp. 3675-3681, Part 1, No. 9A, Sep. 1993.

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