Silicon single crystal wafer having few crystal defects, and met

Details Silicon single crystal wafer having few crystal defects, and met Silicon single crystal wafer having few crystal defects, and met

1999-12-06

2000-09-19

Garrett, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117 13, C30B 1520

Patent

active

061205990

ABSTRACT:
In a method for producing a silicon single crystal wafer, a silicon single crystal is grown in accordance with the Czochralski method such that the F/G value becomes 0.112-0.142 mm.sup.2 /.degree. C..multidot.min at the center of the crystal, where F is a pulling rate (mm/min) of the single crystal, and G is an average intra-crystal temperature gradient (.degree. C./mm) along the pulling direction within a temperature range of the melting point of silicon to 1400.degree. C. Additionally, the single crystal is pulled such that the interstitial oxygen concentration becomes less than 24 ppma, or the time required to pass through a temperature zone of 1050-850.degree. C. within the crystal is controlled to become 140 minutes or less. The method allows production of silicon single crystal wafers in which neither FPDs nor L/D defects exist on the wafer surface, which therefore has an extremely low defect density, and whose entire surface is usable.

REFERENCES:
Yamashita et al., "Effects of Thermal History on OSF Formation in CZ Silicon Crystals," Electrochemical Society Extended Abstracts, vol., 89-1, May 1989, pp. 346-347.
Dupret et al.. "Global Modelling of Heat Transfer in Crystal Growth Furnaces," Int. J. Heat Mass Transfer, vol. 33, No. 9, pp. 1849-1871, 1990.
Sadamitsu et al. "Dependence of the Grown-in Defect Distribution on Growth Rates in Czochralski Silicon," Jpn. J. Appl. Phys., vol. 32 (1993) pp. 3675-3681, Part 1, No. 9A, Sep. 1993.

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