Silicon single crystal wafer and production method thereof...

Details Silicon single crystal wafer and production method thereof... Silicon single crystal wafer and production method thereof...

2005-01-18

2005-01-18

Kunemund, Robert (Department: 1765)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

C117S014000, C117S019000, C117S932000

Reexamination Certificate

active

06843847

ABSTRACT:
A silicon single crystal wafer grown by the CZ method, which is doped with nitrogen and has an N-region for the entire plane and an interstitial oxygen concentration of 8 ppma or less, or which is doped with nitrogen and has an interstitial oxygen concentration of 8 ppma or less, and in which at least void type defects and dislocation clusters are eliminated from the entire plane, and a method for producing the same. Thus, there are provided a defect-free silicon single crystal wafer having an N-region for the entire plane, in which void type defects and dislocation clusters are eliminated, produced by the CZ method under readily controllable stable production conditions with a wide controllable range, and a method producing the same.

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M. Iida et al., “Effects of Light Element Impurities on The Formation of Grown-In Defects Free Region of Czochralski Silicon Single Crystal”, Electrochemical Society Proceedings, vol. 99-1, pp. 499-510.
Wataru Ohashi et al., “Chisso Tenka CZ-Si Kesshou Kekkan Seigyo (No. 1)”, Mar. 28, 1999, Dai 46 kai, Oyou Butsurigaku Kankei Rengou Kouenkai Kouen Yokoshu (Ouyou Butsur Gakkai, Tokyo) p. 468, middle paragraph separate vol. 1.

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