Silicon single crystal wafer and method for producing...

Details Silicon single crystal wafer and method for producing... Silicon single crystal wafer and method for producing...

2005-07-05

2005-07-05

Kunemund, Robert (Department: 1765)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

C117S014000, C117S015000, C117S020000, C117S932000

Reexamination Certificate

active

06913646

ABSTRACT:
There can be provided a silicon single crystal wafer grown according to Czochralski method wherein the whole plane of the wafer is occupied by N region on the outside of OSF generated in a shape of a ring by thermal oxidation treatment and there exists no defect region detected by Cu deposition. Thereby, there can be produced a silicon single crystal wafer according to CZ method, which does not belong to any of V region rich in vacancies, OSF region and I region rich in interstitial silicons, and can surely improve electric characteristics such as oxide dielectric breakdown voltage characteristics or the like under stable manufacture conditions.

REFERENCES:
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patent: 6190452 (2001-02-01), Sakurada et al.
patent: 2001/0000093 (2001-04-01), Sakurada et al.
patent: 0964082 (1999-12-01), None
patent: 04-192345 (1992-07-01), None
patent: 11-236293 (1999-08-01), None
V.V. Voronlov, “The Mechanism of Swirl Defects Formation in Silicon”, Journal of Crystal Growth, vol. 59, 1982, pp. 625-643.
Shinsuke Sadamitsu et al., “Dependence of the Grown-in Defect Distribution on Growth Rates in Czochralski Silicon”, Japanese Journal of Appl. Phys. vol. 32, 1993, pp. 3675-3681.

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