Silicon single crystal pulling method

Details Silicon single crystal pulling method Silicon single crystal pulling method

2007-10-16

2007-10-16

Hiteshew, Felisa (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

C117S032000, C117S217000, C117S218000, C117S917000

Reexamination Certificate

active

10561820

ABSTRACT:
[Problem] A silicon single crystal ingot in which point defect agglomerates do not exist over a substantially entire length thereof is manufactured without reducing a pure margin.[Solving Means] A heat shielding member36comprises a bulge portion41which is provided to bulge in an in-cylinder direction at a lower portion of a cylindrical portion37and has a heat storage member47provided therein. A flow quantity of an inert gas flowing down between the bulge portion41in the heat shielding member36and an ingot25when pulling up a top-side ingot25aof the silicon single crystal ingot25is set larger than a flow quantity of the inert gas flowing down between the bulge portion41and the ingot25when pulling up a bottom-side ingot25bof the silicon single crystal ingot25, thereby pulling up the ingot25. Alternatively, an intensity of a cusp magnetic field53when pulling up the top-side ingot25ais set higher than an intensity of the cusp magnetic field53when pulling up the bottom-side ingot25b.

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