Silicon single crystal manufacturing apparatus

Details Silicon single crystal manufacturing apparatus Silicon single crystal manufacturing apparatus

1993-04-20

1994-05-17

Chaudhuri, Olik

Single-crystal, oriented-crystal, and epitaxy growth processes;

Apparatus

For crystallization from liquid or supercritical state

117217, 117900, 117932, C30B 1530

Patent

active

053126009

ABSTRACT:
An apparatus for making a silicon single crystal large in diameter dependently on the Czochralski process, wherein appropriate openings (11) are provided on the warmth keeping over (10) so as to prevent an undesirable influence caused by atmospheric gas. The major elements of the apparatus are that the sum of areas of the openings (11) is larger than the area of gap (18) formed between the lower end of the warmth keeping cover (10) and the level of silicon solution, and that the warmth keeping cover and the heat insulating member (12) are composed of sheet metal.

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patent: 5009863 (1991-04-01), Shima et al.
patent: 5073229 (1991-12-01), Yamashita et al.

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