Silicon single crystal having eliminated dislocation in its neck

Details Silicon single crystal having eliminated dislocation in its neck Silicon single crystal having eliminated dislocation in its neck

1995-06-07

1996-11-26

Garrett, Felisa C.

Chemistry of inorganic compounds

Silicon or compound thereof

Elemental silicon

117 14, 117201, 117202, 117932, 252 623BT, 423349, C01B 3302

Patent

active

055782841

ABSTRACT:
A silicon single crystal prepared by the Czochralski method including a neck having an upper portion, an intermediate portion, and a lower portion. The upper portion contains dislocations. The intermediate portion is between the upper and lower portions. A majority of the intermediate and lower portions has a diameter greater than 10 millimeters, and the lower portion is free of dislocations. The crystal also includes an outwardly flaring segment adjacent the lower portion of the neck, and a body adjacent the outwardly flaring segment.

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"Silicon Crystals Almost Free of Dislocations"; Borle, et al; J. of Cryst. Growths (1971) pp. 223-225.
W. Dash "Growth of Silicon Crystals Free From Dislocations" Journal of Applied Physics, vol. 30, No. 4 (1959) pp. 459-474.
K. Kim et al. "Maximum Length of Large Diameter Czochralski Silicon Single Crystals At Fracture Stress Limit of Seed" Journal of Crystal Growth 100 (1990) pp. 527-528.

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