Silicon single crystal and method for producing the same

Details Silicon single crystal and method for producing the same Silicon single crystal and method for producing the same

1999-03-17

2000-12-05

Hiteshew, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117 32, 117917, C30B 1522

Patent

active

061561193

ABSTRACT:
In a method for producing a silicon single crystal of high quality, the silicon single crystal is grown based on a magnetic field applied Czochralski method. The single crystal is grown at a high growth rate satisfying the equation Vave.gtoreq.120/r, where Vave denotes an average crystal growth rate, and r denotes a radius of the single crystal, and a rotation number R of the single crystal in growing satisfies the equation R.ltoreq.1250/r. Oxygen concentration in-plane distribution is 10% or less, and a deformation ratio of a constant diameter portion in the silicon single crystal in a direction perpendicular to a crystal growth axis direction is 5% or less. The silicon single crystal has a high uniformity of oxygen concentration in-plane distribution without deformation of crystal, even if the crystal is grown at a growth rate exceeding the upper limits found in conventional techniques.

REFERENCES:
patent: 4330362 (1982-05-01), Zulehner
patent: 5851283 (1998-12-01), Hoshi et al.
Nikkei Microdevices, Jul. 1986, by Nobuyuki Izawa, et al., pp. 87-108.
Semiconductor Silicon Crystal Technology, 1989, by Fumio Shimura, pp. 171-183.
8 Crystals, Growth, Properties, and Applications, by W. Zulehner and D. Huber, 1982, pp. 3-57.

Affiliated with

Also associated with

Rating

Silicon single crystal and method for producing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Silicon single crystal and method for producing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Silicon single crystal and method for producing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-957565