Silicon single crystal and method for growing silicon single...

Details Silicon single crystal and method for growing silicon single... Silicon single crystal and method for growing silicon single...

2007-05-08

2007-05-08

Kunemund, Robert (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

C117S015000, C117S020000, C117S932000, C423S348000

Reexamination Certificate

active

10845322

ABSTRACT:
A silicon single crystal and a method for growing a silicon single crystal are provided. A p-type silicon single crystal is grown with a uniform resistivity value in a pulling direction. Pulling is conducted by the Czochralski method from molten silicon obtained by adding phosphorus to an initial melt in an amount equivalent to 25˜35% of an absolute concentration (atoms/cc) of boron contained in the melt.

REFERENCES:
patent: 4572729 (1986-02-01), Lang et al.
patent: 5720861 (1998-02-01), Kaneko et al.
patent: 2003-137687 (2003-05-01), None
Patent Abstracts of Japan for JP2003-137687 published on May 14, 2003.

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