Silicon sensor contact with platinum silicide, titanium/tungsten

Details Silicon sensor contact with platinum silicide, titanium/tungsten Silicon sensor contact with platinum silicide, titanium/tungsten

1998-07-24

2000-08-22

Nelms, David

Semiconductor device manufacturing: process

Forming schottky junction

Using refractory group metal

438582, 438611, 438648, 438656, 257751, 257754, H01L 2144

Patent

active

061071706

ABSTRACT:
An improved method for forming a metal contact for a silicon sensor. First, platinum is deposited over a contact area. Then the platinum is sintered to form platinum silicide. Subsequently, titanium/tungsten (TiW) is deposited over the platinum silicide. Finally, gold is deposited over the TiW.

REFERENCES:
patent: 4499557 (1985-02-01), Holmberg et al.
patent: 5683594 (1997-11-01), Hocker et al.
patent: 5869381 (1999-02-01), Herbert et al.

Affiliated with

Also associated with

Rating

Silicon sensor contact with platinum silicide, titanium/tungsten does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Silicon sensor contact with platinum silicide, titanium/tungsten, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Silicon sensor contact with platinum silicide, titanium/tungsten will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-580458