Silicon-semiconductor-type thermal head

Details Silicon-semiconductor-type thermal head Silicon-semiconductor-type thermal head

1977-07-21

1980-07-15

Albritton, C. L.

Electric heating

Heating devices

Combined with diverse-type art device

219543, 346 76R, H05B 100

Patent

active

042130301

ABSTRACT:
A silicon-semiconductor type thermal head comprising a substrate of .alpha.-alumina ceramic of single crystalline sapphire a silicon layer of high electrical resistance formed on the upper surface of the substrate and exothermic dots of low electrical resistance silicon integrally formed on the high resistance silicon layer.
The silicon semiconductor type thermal head is formed by forming a substrate of .alpha.-alumina ceramic of single crystalline and sapphire, forming a high resistance layer of silicon on the .alpha.-alumina ceramic, forming a layer of low resistance silicon on the high resistance layer of silicon and selectively etching the low and high resistance silicon layers to produce exothermic dots of low resistance silicon, separated from the substrate by high resistance silicon.

REFERENCES:
patent: 3496333 (1970-02-01), Alexander et al.
patent: 3515850 (1970-06-01), Cady, Jr.
patent: 3659334 (1972-05-01), Becke et al.
patent: 3852563 (1974-12-01), Bohorquez et al.
patent: 4030408 (1977-06-01), Miwi

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