Silicon semiconductor substrate with an insulating layer embedde

Details Silicon semiconductor substrate with an insulating layer embedde Silicon semiconductor substrate with an insulating layer embedde

1987-08-12

1989-06-06

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG12, 437 24, H01L 21265

Patent

active

048371866

ABSTRACT:
A silicon semiconductor substrate includes an insulating layer embedded therein. The silicon semiconductor substrate comprises a first silicon plate, an insulating layer embedded in the first silicon plate so that the surfaces of the silicon plate and the insulating layer are in a mirror surface, and a second silicon plate united with the first silicon plate and the insulating layer at the mirror surface of the first silicon plate and the insulating layer. The insulating layer is used for forming an isolated region in the second silicon plate.

REFERENCES:
patent: 3386865 (1968-06-01), Doo
patent: 3391023 (1968-07-01), Frescura
patent: 3393349 (1968-07-01), Huffman
patent: 3508980 (1970-04-01), Jackson et al.
patent: 4638552 (1987-01-01), Shimbo et al.
J. Electrochem. Soc.: Solid State Science and Technology, Aug. 1986, vol. 133, No. 8, pp. 1673-1677.

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