Silicon semiconductor substrate and method of fabricating the sa

Details Silicon semiconductor substrate and method of fabricating the sa Silicon semiconductor substrate and method of fabricating the sa

1996-11-15

1999-04-13

Guiakowski, Randy

Coating processes

With post-treatment of coating or coating material

Heating or drying

428447, 438455, 438476, 148 333, 148DIG1, 148DIG60, 148DIG147, B05D 302

Patent

active

058940375

ABSTRACT:
A silicon semiconductor substrate including a silicon semiconductor layer at one of upper and lower surfaces thereof, the silicon semiconductor layer being composed of polysilicon or noncrystal silicon and containing oxygen in the range of 2 atomic % to 20 atomic % both inclusive, nitrogen in the range of 4 atomic % to 20 atomic % both inclusive, or both nitrogen at 2 atomic % or greater and oxygen at 1 atomic % or greater. The polysilicon or noncrystal silicon semiconductor layer acts as a core for extrinsic gettering. In the silicon semiconductor substrate, the gettering performance is not deteriorated, even if the silicon semiconductor substrate experiences thermal treatment. Thus, it is possible to get rid of contamination caused by heavy metals in the silicon semiconductor substrate.

REFERENCES:
patent: 4645546 (1987-02-01), Matsushita
patent: 4666532 (1987-05-01), Korb et al.
patent: 4859552 (1989-08-01), Yoshizawa et al.
patent: 5677234 (1997-10-01), Koo et al.

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