Silicon semiconductor component with an edge contour made by an

Details Silicon semiconductor component with an edge contour made by an Silicon semiconductor component with an edge contour made by an

1985-06-14

1987-07-14

Powell, William A.

Metal treatment

Stock

Ferrous

29576W, 29580, 148 15, 156648, 156649, 156657, 156662, 357 56, 357 50, H01L 2906, H01L 21306, B44C 122, C03C 1500

Patent

active

046806156

ABSTRACT:
Silicon semiconductor component with a wafer-like silicon semiconductor body with an edge contour made by an etching technique. The component has a p-region parallel to a principal surface of the semiconductor body and has in this principal surface a passivating ditch, into which leads a pn-junction extending between the more heavily doped p-region and a less heavily doped n-region, in which the edge contour has in the vicinity of a flank length, between the emergence of the pn-junction into the passivating ditch and this principal surface of the semiconductor body, a small angle of inclination of 1.degree. to 7.degree.. The angle of inclination (.alpha.) of the edge contour is nearly uniform over the major part of the flank length (L) and the following relationships apply:

REFERENCES:
IEEE-Transactions on Electron Devices, vol. ED-23, No. 8, Aug. 1976, pp. 950-955.
IEEE-Transactions on Electron Devices, vol. ED-27, No. 5, May 1980, pp. 977-982.

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