Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Reexamination Certificate
2006-08-01
2006-08-01
Hiteshew, Felisa (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
C117S019000, C117S020000
Reexamination Certificate
active
07083677
ABSTRACT:
Using a seed crystal comprising a silicon single crystal not including a vacancy excess region, a neck comprising a silicon single crystal not including a vacancy excess region is grown with a diameter contracted smaller than, or equal to that of the contact surface of the silicon seed crystal in contact with a raw material silicon melt, and necking is performed so that the length L of the neck satisfies L≧d·(cot ψ), where d denotes the length of the diameter or the diagonal of the contact surface of the silicon seed crystal in contact with the raw material silicon melt, and ψ denotes the angle formed between the propagation direction of dislocations and the growth direction of the neck, and then the silicon single crystal is grown with the diameter expanded.
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Foley & Lardner LLP
Hiteshew Felisa
Toshiba Ceramics Co. Ltd.
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